 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ATA7609 10 Gb/s High Overload TIA PRELIMINARY DATA SHEET - Rev 1.0 FEATURES * * * * * * * 1800 Differential Transimpedance 3 mApp Maximum Input Current 14 pA/Hz Input Noise Current Density Single -5.2 V Power Supply Low Group Delay Outputs DC or AC Coupled Same Functionality as ATA7603 with the Output Polarities Reversed IIN VOUT VOUT GND CEXT GND GND GND VEE VEE GND APPLICATIONS * SONET/SDH OC-192 /STM-64 VSR, Short-Reach, Intermediate-Reach, and Long-Reach Receivers 10 Gb/s Ethernet Fiber optic receivers, transceivers, and transponders * * D1 Die PRODUCT DESCRIPTION The ANADIGICS ATA7609 is a -5.2 V high-speed transimpedance amplifier (TIA) designed for 10 Gb/s optical receiver applications available in bare die form and manufactured using an InGaP based HBT process. The device is used in conjunction with a photodetector to convert an optical signal into a differential output voltage that can be AC or DC coupled to a post amplifier. The ATA7609 has an internal overload support circuit VBIAS and can accept optical inputs as high as +3 dBm. With its low noise and high optical overload capability, the device is well suited for 10 Gb/s Ethernet and OC-192 Very Short-Reach (VSR), Short-Reach, Intermediate-Reach and Long-Reach optical receivers, transceivers and transponders. The ATA7609 is identical to the ATA7603 but with the output polarities reversed. IIN VOUT VOUT VREF DC Offset Control Low Pass Filter CEXT VEE Figure 1: Circuit Block Diagram 10/2002 ATA7609 286 mm GND 303 mm CEXT GND GND 170 mm ATA7609 Die Size: 1000 mm x 910 mm IIN Die Thickness: 178 mm Backside metal thickness: 5 mm Pad Opening: 100 mm x 100 mm unless otherwise noted Pad Pitch 150 mm unless otherwise noted VOUT VOUT GND VEE VEE GND 140 mm 286 mm Figure 2: Die Size and Layout Table 1: Pad Description PAD DESCRIPTION V EE Negative Supply Voltage COMMENTS -5.2 V GND Ground I IN TIA Input Photocurrent input Sets the low frequency cutoff Logical '1' with optical input Logical '0' with optical input CEXT Connection for an External Capacitor VOUT Non-inverted Output Voltage VOUT Inverted Output Voltage 2 PRELIMINARY DATA SHEET - Rev 1.0 10/2002 ATA7609 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER DC Power Supply (VEE) Storage Temperature DC Input Current ESD Sensitivity (Human Body Model) MIN -7.0 -65 100 MAX 1.0 125 5.0 - UNIT V C mA V Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Recommended Operating Conditions PARAMETER Operating Voltage Range Operating Temperature Range Die Attach Temperature Photodiode Capacitance (PIN + stray) Photodiode Responsivity Photodiode Contact Resistance Input Bondwire Inductance (1) MIN -5.50 -40 0.7 TYP -5.2 0.225 0.92 10 1.0 MAX -4.90 85 260 0.3 15 - UNIT V o C C o pF A/W nH The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) Defined at the interface between the die and the substrate. PRELIMINARY DATA SHEET - Rev 1.0 10/2002 3 ATA7609 Table 4: DC Electrical Specifications PARAMETER Supply Current (DC Coupled Outputs) Input Offset Voltage Output Offset Voltage (both ports) MIN TYP 95 -3.7 -0.2 MAX 120 UNIT mA V V Table 5: AC Electrical Specifications (1) (VEE = -5.5 V to -4.9 V, Operating Temperature = -40 C to + 85 C unless otherwise noted) PAR AMETER Small Si gnal D i fferenti al Transi mpedance (RL Small Si gnal D i fferenti al Transi mpedance (RL Small Si gnal Bandwi dth Low Frequency C utoff Peaki ng Group D elay D evi ati on (500 MHz to 8.0 GHz) Group D elay D evi ati on (8 GHz to 9.5 GHz) Maxi mum Input C urrent Opti cal Overload (5) (4) (4) (3) = MIN 100 ) 100 ) (2) 1300 1400 8.5 (6) TYP 1800 9.5 30 30 40 +3 1.4 14 -19 400 - MAX 1.5 3.0 20 550 -10 -5 U N IT GHz kHz dB ps ps mApp dB m A pA/Hz dB m mVpp dB dB = Input Referred RMS Noi se C urrent (6) Average Input Referred Noi se C urrent D ensi ty Opti cal Sensi ti vi ty (5) - Maxi mum Si ngle-ended Output Voltage Swi ng Output Return Loss (10 MHz to 8 GHz) Output Return Loss (8 MHz to 20 GHz) - Notes: (1) The specifications are based upon the use of a PIN photodiode with a responsivity of 0.92 A/W and a capacitance of CDIODE + CSTRAY = 0.3 pF max connected to IIN via a 1.0 nH bond wire. (2) Operating temperature range = -5 C to +85 C. (3) With the use of an external 10 nF capacitor. (4) Maximum value - minimum value (5) Measured at 10-10 BER with a 223 -1 PRBS at 10 Gb/s (6) Bandwidth = 9 GHz 4 PRELIMINARY DATA SHEET - Rev 1.0 10/2002 ATA7609 PERFORMANCE DATA Figure 3: Typical Small Signal Frequency Response 3 dB Bandwidth = 9.9 GHz Figure 4: Typical Small Signal Group Delay 320 300 27.2 24.2 Response(dB) Group Delay (ps) 0 2 4 6 8 Frequency(GHz) 10 12 280 260 240 220 200 180 0 2 4 6 8 10 12 21.2 18.2 15.2 Frequency(GHz) Figure 5: Bandwidth vs. Input Inductance 65 64 Tz (Kohms) Figure 6: Differential Transimpedance vs. Input Current 3.000 Vee=-5.2V 2.500 2.000 1.500 1.000 VEE=-4.9V VEE=-5.5V 63 62 Gain (dB) 61 60 59 58 57 56 55 0 2 4 6 8 10 12 Frequency (GHz) Lin = 30mils, BW = 9.3GHz Lin = 35mils, BW = 9.6GHz Lin = 40mils, BW = 9.9GHz Lin = 45mils, BW = 10.6GHz Lin = 50mils, BW = 10.9GHz Lin = 55mils, BW = 11.1GHz Lin = 60mils, BW = 11.1GHz 0.500 0.000 10 100 1000 10000 Input Current (uApp) Figure 7: Differential Output Voltage vs. Input Current up to 1000 mApp 900 800 Figure 8: Differential Output Voltage vs. Input Current up to 4000 mApp 900 800 Output Voltage (mVpp) 700 600 500 400 300 200 100 0 0 200 400 600 800 1000 VEE=-5.2V VEE=-4.9V VEE=-5.5V Output Voltage (mVpp) 700 600 500 400 300 200 100 0 0 500 1000 1500 2000 2500 3000 3500 4000 VEE=-5.2V VEE=-4.9V VEE=-5.5V Input Current (uApp) Input Current (uApp) PRELIMINARY DATA SHEET - Rev 1.0 10/2002 5 ATA7609 Figure 9: Eye Diagram with an Optical Input Power of -18 dBm Figure 10: Eye Diagram with an Optical Input Power of -10 dBm Figure 11: Eye Diagram with an Optical Input Power of 0 dBm Figure 12: Eye Diagram with an Optical Input Power of +3 dBm Figure 13: Eye Diagram with an Optical Input Power of +4 dBm 0 -5 -10 S22 (dB) -15 -20 -25 -30 -35 -40 Figure 14: S22 from Evaluation Test Fixture 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 6 PRELIMINARY DATA SHEET - Rev 1.0 10/2002 ATA7609 APPLICATION INFORMATION Ceramic substrate 2 nH typical CEXT 10nF Ground pads VOUT (50 W) 1.0 nH typical 470 pF Photodiode ATA7609 470 pF Kovar pedestal 220 pF VEE bypass MIM capacitor VOUT (50 W) 10 nF All die bonds are 0.5 nH typical unless otherwise noted VBIAS VEE Figure 15: Bonding Diagram PRELIMINARY DATA SHEET - Rev 1.0 10/2002 7 ATA7609 PACKAGING AND TESTING The ATA7609 is provided as bare die. For optimum performance, the die should be packaged in a hermetic enclosure and a low inductance ground plane should be made available for power supply bypassing and ground bonds. When packaging the ATA7609, the temperature of the die must be kept below 260 C to ensure device reliability. The ATA7609 has backside metal but no ground vias are connected to the backside of the die, so it is critical to bond all of the ground pads to reduce ground inductance. The die can be attached to the substrate using epoxy or solder. A good thermally conductive, silver-filled epoxy is recommended for epoxy mounting. If solder is used for die attach, exposure to temperatures at or above 260 C must be limited to ensure the device reliability. A soft silicon/rubber tip collet should be used for die mounting, although tweezers can be used with extreme care. Thermosonic ball bonding, at a stage temperature of 150 to 175 C, with 1 to 1.3 mil gold wire, is the recommended interconnect technique. The bond force, time, and ultrasonic power are all critical parameters and should be optimized to achieve the best bonding performance. The recommended bonding parameters are: Stage Temperature: 175 C Bond Time: 15 ms Bond Ultrasonic Power: 70 mW Bond Force: 70 g Bond Velocity: 60 mils/ms IIN Connection For optimal performance, the bond wire from the photodetector to IIN should be around 1nH. As the inductance of this connection increases beyond 1nH, more gain peaking will occur and the group delay performance will degrade. VEE Connections In order to achieve optimal performance, the VEE supply pads must be bypassed as close to the chip as possible with one or two high resonant frequency, low value capacitance, MIM capacitors. In either case, both VEE bond pads need to be connected to reduce the supply bond wire inductance. VOUT and VOUT Connections The ATA7609 provides a differential output that can be AC or DC coupled to the next stage of the receiver. The output bond wires should be kept below 1 nH for the best performance. If the device is being used in a single-ended configuration, the unused output port must be terminated into 50 . CEXT Connection In order to achieve the desired low frequency cutoff, an external capacitor is required. A low inductance multilayer chip capacitor of value 10 nF is recommended. RF Testing The following parameters are 100% RF tested on wafer in production at -5.2V at room temperature with 0 input forced current and 1.6mA DC input current: current, transimpedance, bandwidth, peaking, group delay, S11, S22, input offset voltage and output offset voltage. All other parameters are guaranteed by design. 8 PRELIMINARY DATA SHEET - Rev 1.0 10/2002 ATA7609 TYPICAL APPLICATION CIRCUITS VBIAS 100 nF VOUT IIN VIN DCOUT DCOUT VOUT VIN CEXT 10 nF VEE VEE VOUT ATA7609 VEE VEE VEEOS VEE VOUT ALA7606 50 W 50 W Figure 16: ATA7609 DC Coupled to the ALA7606 VBIAS 100 nF VOUT IIN VIN DCOUT DCOUT VOUT VIN CEXT 10 nF VEE VEE VOUT ATA7609 VEE VEE VEEOS VEE VOUT ALA7606 50 W 50 W Figure 17: ATA7609 AC Coupled to the ALA7606 PRELIMINARY DATA SHEET - Rev 1.0 10/2002 9 ATA7609 NOTES 10 PRELIMINARY DATA SHEET - Rev 1.0 10/2002 ATA7609 NOTES PRELIMINARY DATA SHEET - Rev 1.0 10/2002 11 ATA7609 ORDERING INFORMATION ORDER NUMBER ATA7609D1 TEMPERATURE RANGE -40 oC to +85 oC PACKAGE DESCRIPTION D1 COMPONENT PACKAGING Die ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 PRELIMINARY DATA SHEET - Rev 1.0 10/2002 |
Price & Availability of ATA7609
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |